Spin Transfer Torque: a Multiscale Picture
نویسندگان
چکیده
Due to challenges related to physical and electrical scaling, metal-oxide-semiconductor field-effect transistor (MOSFET)-based memory technology is now suffering from increased power leakage and endurance problems. For instance, static random access memory (SRAM) and dynamic random access memory (DRAM) are both volatile, and cannot maintain data when the supplied power is turned off. SRAM has a relatively high cost and the involvement of six transistors makes it unsuitable for high density integration. DRAM can sustain a very high density but suffers from energy dissipation due to the need to refresh its charge. Replacing volatile memory with non-volatile can eliminate standby power consumption and alleviate some of these problems. A universal memory that fills gaps in the contemporary hierarchy presents
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